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U3501BM preliminary information rev. a1, 06-mar-98 1 (20) cordless telephone-signal processor description the programmable cordless phone-signal processor includes all necessary low-frequency parts such as microphone- and earphone amplifier, compander, pre- emphasis, deemphasis, scrambler, fsk modem, power-supply management, as well as rf receiving parts such as if converter, fm demodulator, rssi. several gains and mutes in transmit and receive direction are controlled by a serial bus while compander, pre- and deemphasis and scrambler can be bypassed. features rf receiver part if converter fm demodulator rssi low-frequency part symmetrical input of microphone amplifier symmetrical output of earpiece amplifier compander pre- and deemphasis scrambler data management by fsk coding power-supply management serial bus application: ct1, ct1 plus, 900 mhz usa block diagram log divider mixo ifin2 ifin1 daco scrambler frequency expander rec oscillator 11.15 mhz mixin mixgnd loin vbatt d/a battery low detector lpf c d serial bus lpf tgain adj.2 limiter preem tgain adj.1 compressor ifamp demodulator rgain adj lpf lpf deem fsk modem mic scrambler frequency rxo etc exin reco2 reco1 rxdat txdat mic1 mic2 mico coin vcc txo gnd ctc 13770 loext recdc figure 1. block diagram a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 2 (20) ordering information extended type number package remarks U3501BM so28 pin description ifin1 ifin2 etc exin reco1 1 2 3 4 5 6 7 8 10 9 27 22 21 20 18 19 17 12 11 28 25 26 23 24 mic1 gnd rxo reco2 mico mic2 coin ctc txo vcc loin vbatt loext nc recdc c daco mixgnd d rxdat txdat 16 15 14 13 96 12 387 mixin mixo figure 2. pinning pin symbol function configuration 1 txo transmit section analog output 14725 1 2 ctc compressor time constant control analog output 14726 2 a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 3 (20) pin symbol function configuration 3 coin compressor analog input 3 14727 4 mico microphone amplifier output 4 14728 5 mic2 non-inverting input of microphone amplifier 5 6 mic1 inverting input of microphone amplifier 14729 6 8 rxo intermediate receive analog output 14730 8 9 reco2 symmetrical output of receive amplifier 9 10 10 reco1 symmetrical output of receive amplifier 14731 10 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 4 (20) pin symbol function configuration 11 exin expander analog input 14732 11 12 etc expander time constant control analog output 12 14733 13 ifin2 symmetrical if amplifier input 13 14 ifin1 symmetrical if amplifier input 14 14734 15 mixo mixer output 15 14735 16 mixin mixer input 16 14736 a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 5 (20) pin symbol function configuration 18 recdc reference-voltage generation for fsk demodulator 14737 18 20 loext external lo input 20 14738 22 loin local oscillator input for tco or sc filter oscillator: 11.15 mhz 22 14739 23 vcc supply-voltage output for periph- erals and internal supply of digital part 24 daco d/a comparator output 24 14740 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 6 (20) pin symbol function configuration 25 c clock input of serial bus 25, 26 26 d data input of serial bus 14741 27 rxdat receive data digital output 27 14742 28 txdat transmit data digital input 28 14743 absolute maximum ratings parameters symbol value unit c c c c thermal resistance parameters symbol value unit a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 7 (20) electrical characteristics test conditions (unless otherwise specified): v batt = v cc = 3.6 v, t amb = +25 c parameters test conditions symbol min. typ. max. unit fig. current consumption erx2 elna erxhf erx1 erxo eea edee etx epree 000000000 a rx demodulating modem-signal erxhf = erx1 = 1 1.7 2.6 3.7 ma operating current, rx and tx completely active erx2 = elna = erxhf = erx1 = erxo = eea = edee = gdem = etx = 1 7 11.5 ma input resistance 3 3 third-order input intercept point ?9 dbm 3 carrier breakthrough from internal lo (11.15 mhz) to if output 300 v rms 3 carrier breakthrough from internal lo (11.15 mhz) to rf input 10 v 3 receiver if mixer , f = 10.7 mhz if amplifier: rssi input resistance 4 rssi sensitivity v if = 0 v rms starting from 0 increase rssi level until mean of sampled signal at daco is < 0.2 rssi level = con0 v if = 6 v rms , f = 450 khz increase rssi level again until mean of sampled signal at daco is < 0.2. rssi level = con1 rssi sensitivity = con1-con0 4 4 rssi level step-size in the logarithmic region 0.46 db 4 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 8 (20) *) rssi level programming (typical values) input voltage v if ( v rms ) rssi level (decimal) rf demodulator f if = 450 khz, f mod = 1 khz, v if = 500 v rms bscr edee grx0 grx1 grx2 grx3 erx1 erxo 10111011 recovered audio (peak-to-peak) gdem = 0, f fm = 2.5 khz gdem = 1, f fm = 5 khz 0.4 0.4 0.8 0.8 1.6 1.6 v v 5 rx audio, gdem = 0 change of rx0 signal deemphasis bypass output signal vs. frequency relative to 1 khz (0 db) deemphasis bypassed 100 hz 300 hz 1800 hz 3400 hz 4350 hz ?8.0 ?2.2 ?1.4 ?0.8 ?80 ?7.0 ?1.2 ?0.4 0.2 ?60 ?6.0 ?0.2 0.6 1.2 ?55 db 5 output signal versus frequency relative to 1 khz (0 db) deemphasis enable edee = 1 100 hz 300 hz 1800 hz 3400 hz 4350 hz ?1.6 3.2 ?5.7 ?10.5 ?80 ?0.6 4.2 ?4.7 ?9.5 ?60 0.4 5.2 ?3.7 ?8.5 ?55 db 5 total harmonic distortion fm = 250 hz fm = 2.50 khz 2.5 2.5 % 5 audio mute fm = 2.5 khz erx0 = 0 erx1 = 0 erx2 = 0 65 db 5 5 a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 9 (20) parameters test conditions symbol min. typ. max. unit fig. expander eea gea0 gea1 gea2 gea3 gea4 100011 gain tracking v exin = ?20 dbv rms v exin = ?30 dbv rms v exin = ?35 dbv rms v exin = ?40 dbv rms ?21 ?41 ?53 ?50 ?60 ?19 ?39 ?47 db 6 6 gain change versus supply voltage v batt = 3.2 v to 4.7 v ?0.5 0.5 db 6 attack time v exin = step ?20 dbv rms ?14 dbv rms , measure time after step when output voltage is 0.75 times the final value t r 16 ms 6 release time v exin = step 14 dbv rms ?20 dbv rms , measure time after step when output voltage is 1.5 times the final value t f 16 ms 6 earpiece amplifier bcomp = 1, eea = 1, v exin = 100 mv rms maximum gain gea0 gea1 gea2 gea3 1 1 1 1 gea4 = 1 19 20 21 db 6 medium gain gea0 gea1 gea2 gea3 0 0 0 0 gea4 = 1 4 5 6 db 6 minimum gain gea0 gea1 gea2 gea3 0 0 0 0 gea4 = 0 ?12 ?11 ?10 db 6 gain change vs. supply voltage v batt = 3.2 v to 4.7 v ?0.2 0.2 db 6 6 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 10 (20) parameters test conditions symbol min. typ. max. unit fig. low-frequency transmitter gmic epree bxcr g1tx g2tx bcomp etx 1 1 1 1000 1000 1 1 microphone amplifier v mic = 10 mv rms , f in = 1 khz gain change vs. supply voltage v batt = 3.2 v to 4.7 v ?0.2 0 0.2 db 7 7 7 output noise (psophmetrically weighted) v mic = 0 v rms high gain (inputs closed across 200 ) 50 v rmsp 7 tx audio v coin = ?20 dbv rms tx gain versus frequency (pre-emphasis bypassed) relative to 1 khz reference level 0 db 100 hz 300 hz 1800 hz 3400 hz 4350 hz ?1.3 ?1.2 ?0.8 ?1.1 ?20.0 ?0.3 ?0.2 0.2 ?0.1 ?24.0 0.7 0.8 1.2 0.7 ?28.0 db 8 gain versus frequency with pre-emphasis relative to 1 khz reference level 0 db 100 hz 300 hz 1800 hz 3400 hz 4350 hz ?7.5 ?6.5 3.3 6.9 ?15.0 ?6.5 ?5.8 4.3 7.0 ?14.0 ?5.5 ?4.5 5.3 8.9 ?13.0 db 8 limiter output voltage (peak-to-peak) mute etx = 0, v coin = ?10 dbv attenuation at tx0 output 65 db output impedance a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 11 (20) parameters test conditions symbol min. typ. max. unit fig. compander / compressor bscr epree g2tx0 g2tx1 g2tx2 g2tx3 etx g1tx0 g2tx1 g1tx2 g1tx3 10010110010 8 gain tracking v coin = ?30 dbv rms v coin = ?50 dbv rms v coin = ?60 dbv rms v coin = ?70 dbv rms ?11 ?21 ?22 ?30 ?9 ?19 ?28 db 8 attack time v coin = step ?30 dbv rms ?18 dbv rms measure time after step when output voltage is 1.5 times the final value t r 3.5 ms 8 release time v coin = step ?18 dbv rms ?30 dbv rms measure time after step when output voltage is 0.75 times the final value t f 14.4 ms 8 scrambler epree bscr bcomp 001 conversion gain versus frequency f in (1 khz) reference level 0 db f in =100hz, f out =4255hz f in =300hz, f out =4055hz f in =700hz, f out =3655hz f in =1800hz, f out =2555hz f in =2600hz, f out =1755hz f in =3400hz, f out =955hz f in =3600hz, f out =755hz f in =1000hz, f out =3355hz ?4.5 ?2.3 ?0.9 ?1.1 ?1.1 ?2.5 ?4.9 ?1 ?3.5 ?1.3 0.1 ?0.1 ?0.1 ?1.5 ?3.9 0 ?2.5 ?0.3 1.1 0.9 0.9 ?0.5 ?2.8 1 db 9 descrambler edee bscr bcomp 001 conversion gain versus frequency f in =4255hz, f out =100hz f in =4055hz, f out =300hz f in =3655hz, f out =700hz f in =2555hz, f out =1800hz f in =1755hz, f out =2600hz f in =955hz, f out =3400hz f in =755hz, f out =3600hz f in =3355hz, f out =1000hz ?3.8 ?1.6 ?0.5 ?1.7 ?0.7 ?1.4 ?1.7 ?1 ?2.6 ?0.6 0.5 ?0.7 6.3 ?0.4 ?0.7 0 ?1.8 0.1 1.5 0.3 1.3 0.6 0.3 1 db 9 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 12 (20) parameters test conditions symbol min. typ. max. unit fig. fsk modem (1200 bauds) fsk-demodulator input signal discriminator ifin1-ifin2????rxdat 2100 hz ??? = 0 1300 hz ??? = 1 ifin = 450 khz vifin = 0.5 mv rms df = 2.4 khz erx1 = 1 gdem = 0 (high gain) grx3 = 1 (+1db) 1720 1660 hz hz fsk ? modulator txdat ??? txo output signal level txdat ??? txout signal distortion txdat ??? txout etx = 1 efsk = 1 txdat = 0 txout = 2100 hz txdat = 1 txout = 1300 hz txdat = 0 txout = 2100 hz txdat = 1 txout = 1300 hz 0.87 1.54 1.54 2 2 vpp vpp % % output signal frequency output signal ? distortion ? offset level 1.5 2 % v logical part inputs: c, d, txdat low-voltage input high-voltage input input leakage current (0 < vi < v cc ) 2.5 ?1 0.5 1 v v a a input loin input leakage current pin xck (0 < vi < v cc ) ?5 5 a outputs: daco, rxdat output low output high l ol = 10 a l oh = ?10 a 0.9 v cc 0.1 v cc serial bus data set-up time data hold time clock low time clock high time hold time before transfer condition data low pulse on transfer condition data high pulse on transfer condition t sud t hd t cl t ch t eon t eh t eof 0.1 0 2 2 0.1 0.2 0.2 s s s s s s s 12 a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 13 (20) parameters test conditions symbol min. typ. max. unit fig. battery management max batlow min batlow over switch da0 to 6 = 27 bin, rbat = 1 3.05 3.2 3.35 v max bathigh battery switch off threshold max batlow : maxbl (battery voltage when all dac bits are high, low range) min batlow : minbl (battery voltage when dac bits are 0011011, low range) max bathigh : maxbh (battery voltage when all dac bits are high, high range) min bathigh : minbh (battery voltage when all dac bits are low, high range) adjust step : adjust step max ? min : maxbh ? minbh minbl ? swoff : minbl ? swoff off threshold : swoff (off threshold of the battery switch) on threshold : swon (on threshold of the battery switch) hysteresis : swon ? swoff switch r on : switch r on (resistance of the switch transistor, when switch is ?on?) 15 16 mixin 10 nf 100 nf 50 ? 1.5 k ? rf generator v frf mixo 11780 11.15 mhz figure 3. test circuit 11781 14 13 ifin1 100 nf v if 100 nf 25 26 24 rssi?level information rssi?level programming setup ifin2 d c daco figure 4. a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 14 (20) 11782 14 13 ifin1 v if 8 ifin2 100 f 470 nf 100 f 2.5 k ? rxo figure 5. 11783 12 11 etc v exin 26 470 nf 100 nf d exin 10 reco1 9 reco2 1 k ? 25 c setup figure 6. 11784 6 mic1 v mic 26 100 nf d mic2 mico 20 k ? 25 c setup 5 4 100 ? 100 ? figure 7. 11785 26 d 25 c setup 3 2 1 v coin 100 nf coin 470 nf ctc 100 k ? figure 8. f?3 db=3.35 khz signal: 4.35 khz/dc/off state : scron/scroff/data gain : ?4 db/0 db/off f?3 db=4.2 khz signal: 1 khz state : scron/scroff gain : 5.9 db/1.9 db f?3 db=4.2 khz signal: 4.35 khz/dc/off state : descron/descroff/data gain : ?4 db/0 db/off f?3 db=3.35 khz signal: 1 khz state : descron/descroff gain : ?0.5 db/?4.5 db data data gain stage gain stage output buffer deemphasis 13320 figure 9. a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 15 (20) serial bus interface the circuit is remoted by an external microcontroller trough the serial bus. the data is an 12-bit word: a3 ? a0: address of the destination register (0 to 15) d7 ? d0: contents of register the data line must be stable when the clock is high and data must be shifted serially. after 12 clock periods, the transfer to the destination reg- ister is generated (internally) by a low to high transition of the data line when the clock is high. micro- processor d clock c 96 11787 data figure 10. word transmission transfer condition 2nd word ist word data (d) clock (c) d0 d1 d2 a1 a2 a3 13317 figure 11. serial bus transmission address decoder 4 8 128 latches 0 15 data clock commands 96 11789 figure 12. a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 16 (20) t sud t hd t ch t cl t eon t eh t eoff a1 a2 a3 d0 (d) (c) data clock 13318 figure 13. content of internal registers the register have the following structure: d7 d6 d5 d4 d3 d2 d1 d0 r0: reference for d/a converter muxda da6 da5 da4 da3 da2 da1 da0 muxda: d/a multiplexing da(6:0): reference voltage d/a r1: gain adjustment reclf gea3 gea2 gea1 gea0 grx3 grx2 grx1 grx0 gea(3:0): gain earpiece amplifier (see also r5) grx(3:0): gain adjustment rx r2: gain adjustment tranlf g2tx3 g2tx2 g2tx1 g2tx0 g1tx3 g1tx2 g1tx1 g1tx0 g2tx(3:0): gain adjustment tx after limiter g1tx(3:0): gain adjustment tx r3: enable functions receive gdem edde eea erxo erx1 erxhf free erx2 gdem: gain demodulator edde: enable deemphasis (disables bypass) eea: enable earpiece amplifier erxo: enable rxo output erxhf: enable mixer and if amplifier erx(1:2): enable parts of rxlf a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 17 (20) r4: enable functions transmit srssi rbat bcomp bscr gmic efsk epree etx srssi: rssi sample hold rbat: battery detection high/low range bcomp: bypass compressor and expander bscr: bypass scrambler and descrambler gmic: gain of microphone preamplifier efsk: enable modulator of fsk modem epree: enable pre-emphasis (disables bypass) etx: enable tx low frequency part r5: free free free free free free gea4 extlo gea4: gain earpiece amplifier msb (see also r1) extlo: select input mixer r6 ? r15: reserved for u3500bm example of mode setting using enable bits and battery switch U3501BM, see figure 14 active mode (transmission) active mode (pll convergence waiting) receive mode (only data) receive mode (rx waiting) standby mode (ex: battery low) inactive mode (switch off) transmitter *mc x *etx, erx2, erxo x x x x mc + logic part (enabled when v batt > 3.2v) x x x x x switch comparator of vcc (always enabled) x x x x x x mc = microcontroller, *mc = link directly from microcontroller a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 18 (20) application circuit log divider mixo ceramic filter 450 khz scrambler frequency expander rec oscillator 11.15 mhz mixin mixgnd d/a battery low detector lpf serial bus lpf tgain adj.2 limiter preem tgain adj.1 compressor ifamp demodulator rgain adj lpf lpf deem fsk modem mic scrambler frequency rxo ctc 13769 loext loin c d rx vco ifin1 ifin2 daco recdc 11.15 mhz reference 20.95 mhz u2782b tx vco double pll duplex filter vbatt etc exin rxdat reco1 txdat reco2 mic1 mic2 mico coin gnd c supply m c first mixer u2796b xtal filter 1 if 21.4 mhz lna discrete rx tx discrete discrete transmitter front end supply txo vcc components components components figure 14. application circuit a d r o n i c c o m p o n e n t s g m b h
U3501BM preliminary information rev. a1, 06-mar-98 19 (20) package information 13033 technical drawings according to din specifications 0.25 0.10 package so28 dimensions in mm 0.4 1.27 16.51 18.05 17.80 2.35 7.5 7.3 9.15 8.65 10.50 10.20 0.25 28 15 114 a d r o n i c c o m p o n e n t s g m b h
U3501BM rev. a1, 06-mar-98 preliminary information 20 (20) ozone depleting substances policy statement it is the policy of temic semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2594, fax number: 49 ( 0 ) 7131 67 2423 a d r o n i c c o m p o n e n t s g m b h

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